semiconductors翻译（semiconductor devices翻译）

本文目录一览：

• 1、公司简介翻译
• 2、光伏，翻译，英译汉。
• 3、功率半导体器文章英文翻译

公司简介翻译

串行系统有限公司於1988年开始运作，作为电子元器件分销商在新加坡。本公司於作为一个私营有限实体1992年4月在新加坡创业板上市，1997年。串行系统有限公司成为新加坡证券交易所有限公司（新交- ST）的主板上市公司2000年7月10日。本集团的海外办事处网络，业务和交涉，在中国，香港，韩国，台湾，印度，马来西亚，泰国，菲律宾和越南

1988年，新晔电子有限公司在新加波成立，主要经营电子件。新晔电子于1992年四月完成私有化整合并于1997年在新加坡股票交易所上市，并于2000年10月成为新加坡证券交易所主要上市公司，公司拥有广泛的海外销售网络，在中国大陆，中国香港，韩国，中华台湾，印度，马来西亚，逗罩泰国，菲律宾，越南都有分公司。

半导体/元器件分销商

该集团是一家领先的半导体/元器件分销商在亚太地区，提供设计支持，技术解决方案和服务，物料计划和库存managementrepresentations在中国，香港，韩国，台湾，印度，马来西亚，泰国，菲律宾和越南。

半导体元器件经销商

集团在亚太区是半导体元歼茄器件经销商的领导者，提供元件设计，技术服务解决方案，原材料和库存管理。

本集团分销全方位的主动和被动元件的原始设备制造商和分包商在各行业，并已建立了紧密的业务和技术与客户联系。

客户提供创新的增值服务，如全包设计，仓储和物流支持。这些都是旨在帮助客户提高竞争力，交货能力，降低库存和成本，并缩短其时间tomarket。

本集团的供应商，包括完善的名称，如德州仪器，安森美半导体，泰景系统香港有限公司，飞利浦半导体，

新加坡半导体，矽存储技术公司，安华高科技国际，泰科电子，日立环球存储科技公司，美光半导体亚洲和火星。

集团主要代理德州仪器（德州仪器），安森美（美半导体），泰景（Telegent Systems的).......

商业利益

本集团将继续为企业创造一个环境，致力於为客户提供服务和产品质量精益求精，不断取得成功

业绩和盈利能力，并成为主要的半导体/元器件分销商在该地区。

商业目标

集团将会一直提供优秀的服务和产品质量，保持在效率和收益的成功，并且氏指察一直致力於维护在半导体元件行业的领先地位。

光伏，翻译，英译汉。

1.16个光伏组件（的）总开路电压可能高达720V，这就需要1,000V金属氧化物半答数芦导体场效应晶体管/绝清带缘栅双极型晶体管，才能保证这些半导体电压调降75%。

2.这些二极管排不会有什么损失，各个（独立的）最大功率点跟踪可适用于各线体毕没。

注：

MOSFET：金属氧化物半导体场效应晶体管，全称Metal-Oxide-Semiconductor Field Effect Transistor：绝缘栅双极型晶体管，全称Insulated Gate Bipolar Transistor

MPPT：最大功率点跟踪，全称Maximum Power Point Tracking

功率半导体器文章英文翻译

Power semiconductor devices and power electronics

World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics.

According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only.

At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society.

The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices.

The development of power semiconductor devices in three stages

The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.

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